Compensation and deep levels in II–VI compounds

We have investigated deep levels in semiconducting and semi-insulating II–VI compounds, namely undoped CdTe, CdTe:Cl and CdZnTe, in order to understand their role in the compensation mechanisms. To this aim we have utilized both junction spectroscopy techniques and cathodoluminescence (CL) spectroscopy. As junction spectroscopy methods we have utilized deep level transient spectroscopy (DLTS), photo-induced current transient spectroscopy (PICTS) and photo-DLTS (P-DLTS). By exploiting the peculiarities of these experimental methods, joined by CL characterization, we were able to gain further insight into the revealed traps properties, such as the trap nature (donor/acceptor). We have focused our attention on the deep levels that have been suggested to be involved in the compensation process, such as centre A.