Title of article
Compensation in p-type ZnSe based semiconductors
Author/Authors
Prior، نويسنده , , K.A. and Meredith، نويسنده , , Harriet W. and Brownlie، نويسنده , , G.D. and Zhu، نويسنده , , Z. and Thompson، نويسنده , , P.J. and Milnes، نويسنده , , J.S. and Hauksson، نويسنده , , I.S. and Horsburgh، نويسنده , , G. and Steele، نويسنده , , T.A. and Wang، نويسنده , , S.Y. and Cavenett، نويسنده , , B.C.، نويسنده ,
Pages
7
From page
9
To page
15
Abstract
Over the past few years nitrogen has been shown to be by far the best dopant to use in the production of p-type ZnSe, although it is often highly compensated. This review describes the evidence for compensation in ZnSe:N due to the presence of selenium vacancy complexes and also more recent evidence for the presence of other compensating donors and deep acceptors. The use of hydrogen plasma exposure to reduce the concentrations of these complex species is discussed. Various models have previously been presented to explain the compensation of ZnSe, and here we discuss the role of surface states in the pinning of the Fermi level and its effect on compensation. Finally, we show that the compensating selenium vacancies have been found by many authors to be mobile and discuss the mechanisms which may account for this behaviour.
Keywords
Deep levels , N doping , ZnSe , Compensation
Journal title
Astroparticle Physics
Record number
2064160
Link To Document