Title of article
Growth and properties of semi-insulating VGF-GaAs
Author/Authors
Buhrig، نويسنده , , E. and ، نويسنده , , Frank، نويسنده , , C and Hannig، نويسنده , , C. and Hoffmann، نويسنده , , B.، نويسنده ,
Pages
4
From page
248
To page
251
Abstract
Semi-insulating 2″ GaAs single crystals have been grown using the vertical gradient freeze (VGF) method. The melt was completely encapsulated using B2O3 (LE-VGF) to minimize the interaction with the crucible material. In this way, a homogeneous etch pit density (EPD) below 1000 cm−2 was obtained. Different annealing regimes were used to optimize the homogeneity of the electrical properties and precipitates.
Keywords
Gallium arsenide , Annealing , Vertical gradient freeze
Journal title
Astroparticle Physics
Record number
2064447
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