• Title of article

    III–V compounds for high-temperature operation

  • Author/Authors

    Hartnagel، نويسنده , , Hans Ludwig، نويسنده ,

  • Pages
    5
  • From page
    47
  • To page
    51
  • Abstract
    The latest results obtained by a number of authors from various laboratories are reviewed. A variety of sensors operating at increased temperatures have been developed in view of automotive and aircraft applications. Here, the special physical properties found with compound semiconductors are exploited with often good advantage. Similarly, electronic circuits have been made and evaluated at increased temperatures. Of particular interest is of course when microwave radar circuits can also be used with such hot environments, an example being hot-liquid level monitoring by FMCW radar. The semiconductors employed have not only been the classical GaAlAs, but also heterostructures with high conduction or valance-band offsets and materials such as GaN.
  • Keywords
    Microwave radar circuits , High-temperature electronics , III–V semiconductors , GaN , GaAlAs
  • Journal title
    Astroparticle Physics
  • Record number

    2064637