Electrical characteristics of GaN/6H-SiC n-p heterojunctions

n-Type GaN layers of high crystalline quality have been grown on p-type 6H-SiC substrates by HVPE. The electronic properties of the n-p heterojunctions indicate a typical diode behaviour. The turn-on voltage of the forward I-V characteristic is about 2 V while the reverse characteristic showing an abrupt breakdown at voltage close to 30 V. Using C-V measurements, the density of interface traps has been estimated to be 7 × 1012 cm−2. These interface traps limit the current transport in the p-6H-SiC/n-GaN heterojunction.