Title of article
Epitaxial growth and strain of manganite thin films
Author/Authors
Konishi، نويسنده , , Yoshinori and Kasai، نويسنده , , Masahiro and Izumi، نويسنده , , Makoto and Kawasaki، نويسنده , , Masashi and Tokura، نويسنده , , Yoshinori، نويسنده ,
Pages
6
From page
158
To page
163
Abstract
Thin films of La1−xSrxMnO3 (x=0.4) were fabricated using pulsed laser deposition (PLD) method on various substrates for investigation of the effect of strain induced by lattice mismatch on the electro-magnetic properties. The growth conditions were optimized on SrTiO3 substrate which has the best lattice matching (+0.9%) among the substrates used in this study. The resistivity and magnetization of thick films (>6 nm) on SrTiO3 were comparable to those of bulk single crystals. With increasing the lattice mismatch by using LaAlO3 (−2.0%), the resistivity increased to show insulating behavior caused by biaxial strain due to coherent epitaxial growth. However, further increase of mismatch for NdAlO3 (−3.1%) and YAlO3 (−4.0%) made it possible to relax partly the strain, resulting in highly conductive films.
Keywords
Pulsed laser deposition (PLD) method , Substrate dependency , lattice mismatch , Manganite thin film , epitaxial growth , Strain relief mechanism
Journal title
Astroparticle Physics
Record number
2066412
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