Self-organization as a means to suppress and control defect formation in silicon

It was established that in any phase changes in Si (realized by self-organization), there arises an oscillating sequence of specific microstates. Along ascending and descending branches of the oscillations, the concentrations of thermal donors (TDs) and other defects change in the opposite directions with changes in the parameters of state. This feature of self-organization makes it possible to obtain silicon with low densities of defects.