Title of article
GaN-based laser diode with focused ion beam-etched mirrors
Author/Authors
Ambe، نويسنده , , C. and Takeuchi، نويسنده , , T. and Katoh، نويسنده , , H. and Isomura، نويسنده , , K. and Satoh، نويسنده , , T. and Mizumoto، نويسنده , , R. and Yamaguchi، نويسنده , , S. and Wetzel، نويسنده , , C. and Amano، نويسنده , , H. and Akasaki، نويسنده , , I. and Kaneko، نويسنده , , Y. Pittini-Yamada، نويسنده , , N.، نويسنده ,
Pages
4
From page
382
To page
385
Abstract
GaN-based MQWs-SCH laser diodes (LDs) with Fabry–Perot resonator mirrors fabricated by focused ion beam (FIB) etching were demonstrated for the first time. The diodes show lasing by pulsed current injection at room temperature with a lasing wavelength near 410 nm. FIB etching of the mirrors significantly reduced the threshold current from 1.25 to 0.75 A. In addition we studied the dependence of I-L characteristics on the successive rotation of the etched mirror of a single device and found a strong angular dependence. A similar study of the tilting angle revealed a very weak variation.
Keywords
Fabry–Perot resonator mirrors , Focused ion beam etching , GaN-based laser diode
Journal title
Astroparticle Physics
Record number
2066759
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