Title of article
Influence of reactor cleanness and process conditions on the growth by PVT and the purity of 4H and 6H SiC crystals
Author/Authors
Grosse، نويسنده , , P and Basset، نويسنده , , G and Calvat، نويسنده , , C and Couchaud، نويسنده , , M and Faure، نويسنده , , C and Ferrand، نويسنده , , B and Grange، نويسنده , , Y and Anikin، نويسنده , , M and Bluet، نويسنده , , J.M and Chourou، نويسنده , , K and Madar، نويسنده , , R، نويسنده ,
Pages
5
From page
58
To page
62
Abstract
We have investigated the influence of crucible purity on SiC crystals grown by physical vapor transport. A quadrupole gas analyser has been used to monitor the outgas stage of the growth system. Secondary ion mass spectroscopy (SIMS) and glow discharge mass spectroscopy (GDMS) analysis have been performed to study the purity of the graphite at different stages of the thermal treatment and to study the transfer of impurities into the grown crystals.
Keywords
Graphite purity , GDMS , silicon carbide , SIMS
Journal title
Astroparticle Physics
Record number
2067387
Link To Document