Title of article
A practical model for estimating the growth rate in sublimation growth of SiC
Author/Authors
Rهback، نويسنده , , P and Yakimova، نويسنده , , R and Syvنjنrvi، نويسنده , , M and Nieminen، نويسنده , , R and Janzén، نويسنده , , E، نويسنده ,
Pages
4
From page
89
To page
92
Abstract
An analytical model for the growth rate of one-dimensional sublimation process is presented. The model takes into account latent heat, diffusion through inert gas and absorption-desorption at the active surfaces. It is best applicable to growth at relatively high pressures and/or small source-to-seed distances.
Keywords
silicon carbide , Crystal growth , Physical vapor transport , Mathematical Modeling
Journal title
Astroparticle Physics
Record number
2067394
Link To Document