Title of article
Numerical simulation of implanted top-gate 6H–SiC JFET characteristics
Author/Authors
Lades، نويسنده , , M and Berz، نويسنده , , D and Schmid، نويسنده , , U and Sheppard، نويسنده , , S.T and Kaminski، نويسنده , , N and Wondrak، نويسنده , , W and Wachutka، نويسنده , , G، نويسنده ,
Pages
4
From page
415
To page
418
Abstract
A detailed numerical analysis of implanted top-gate 6H–SiC JFET structures was performed revealing the influence of a non-uniform channel doping profile. Based on structural parameters extracted from simulations of the device characteristics at various bias conditions and temperatures, we obtain channel mobility parameters close to Hall data for bulk epitaxial layers.
Keywords
Reverse modeling , JFET , Simulation , High-temperature , SiC
Journal title
Astroparticle Physics
Record number
2067472
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