Title of article
Photoenhanced wet chemical etching of MBE grown gallium nitride
Author/Authors
Stanton، نويسنده , , N.M and Kent، نويسنده , , A.J and Hawker، نويسنده , , P and Cheng، نويسنده , , T.S. and Foxon، نويسنده , , C.T and Korakakis، نويسنده , , D and Campion، نويسنده , , R.P and Staddon، نويسنده , , C.R and Middleton، نويسنده , , J.R، نويسنده ,
Pages
4
From page
52
To page
55
Abstract
Room-temperature photoenhanced wet chemical etching of MBE grown GaN has been studied during the processing of devices for a physics research programme. The process uses a 0.5 M KOH solution with illumination provided by a mercury arc lamp emitting at 365 nm. The maximum etch rate achieved was ∼45 nm min−1, much lower than that for MOCVD material etched under similar conditions. Surface morphologies vary significantly for wafers etched under nominally identical conditions, from surfaces with whiskers to highly crystallographic faces.
Keywords
Gallium nitride , Photoenhanced wet chemical etching , MBE
Journal title
Astroparticle Physics
Record number
2067878
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