Influence of NO2 on the electrical conductivity of lutetium phthalo-naphthalocyanine thin films

This paper describes the results of the action of gaseous NO2 on the semiconducting properties of lutetium phthalo-naphthalocyanine thin films. They are compared to those already presented on the interaction between NO2 and lutetium diphthalocyanine or copper phthalocyanine thin films. The difference in behaviour among the three compounds in the presence of NO2 is due to (i) the different intrinsic charge carrier concentrations, (ii) the more or less good ability to undergo redox reactions with dopants, and (iii) the polycrystalline or quasi-amorphous structures of the thin films which influence the diffusion rate of the gas within the layers.