Title of article
Light activated p-n junction device based on bilayer substituted polythiophene derivatives
Author/Authors
Greenwald، نويسنده , , Y. and Poplawski، نويسنده , , J. and Ehrenfreund، نويسنده , , E. and Speiser، نويسنده , , S.، نويسنده ,
Issue Information
دوماهنامه با شماره پیاپی سال 1997
Pages
2
From page
1353
To page
1354
Abstract
A new photoinduced current rectifier based on an all-organic donor-acceptor bilayer substituted polythiophene derivative is described. Under visible and UV illumination (350–750 run), a p-n junction is formed leading to current rectification. Maximum photorectified current is obtained at ≅400 run, with a sharp decrease at shorter wavelengths. This sharp decrease indicates that photons with energy higher than 3.1 eV quench the light activation of this bilayer device.
Keywords
Polythiophene derivatives , Photo activated device
Journal title
Synthetic Metals
Serial Year
1997
Journal title
Synthetic Metals
Record number
2070965
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