Title of article
BEDT-TTF, BEDO-TTF, and BEDSe-TTF salts with metal containing anions
Author/Authors
Lyubovskaya، نويسنده , , R.N. and Zhilyaeva، نويسنده , , E.I. and Torunova، نويسنده , , S.A. and Bogdanova، نويسنده , , O.A. and Konovalikhin، نويسنده , , S.V. and Dyachenko، نويسنده , , O.A. and Lyubovskii، نويسنده , , R.B.، نويسنده ,
Issue Information
دوماهنامه با شماره پیاپی سال 1997
Pages
2
From page
1581
To page
1582
Abstract
The synthesis of new BEDO-TTF and BEDSe-TTF based salts with metal containing anions [HgX3]−, [HgX4]2−, [Hg3X8]2− (X = Cl, Br, I), [Hg3.5I9]2−, [KHg(SCN)4]−, [NH4Hg(SCN)4]2−, and [Pt(CN)4]2− is discussed. Most of the BEDO-TTF salts behave as metals down to 4 K. Among BEDSe-TTF salts only (BEDSe-TTF)4Hg3Br8 TCE is a metal with the metal-insulator transition at 193 K.
Keywords
Electrocrystallization , Organic conductors based on radical cation salts , Conductivity
Journal title
Synthetic Metals
Serial Year
1997
Journal title
Synthetic Metals
Record number
2071072
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