Title of article
A new highly conductive BO-(MeO)2 TCNQ Langmuir-Blodgett film
Author/Authors
Ogasawara، نويسنده , , K. and Ishiguro، نويسنده , , T. and Horiuchi، نويسنده , , S. and Yamochi، نويسنده , , H. and Saito، نويسنده , , G. and Nogami، نويسنده , , Y.، نويسنده ,
Issue Information
دوماهنامه با شماره پیاپی سال 1997
Pages
2
From page
1835
To page
1836
Abstract
A stable, highly conductive Langmuir-Blodgett (LB) film was developed with a charge-transfer (CT) complex of bisethylenedioxytetrathiaful valene (BO) and dimethoxytetracyanoquinodimethane using the unique nature of BO molecules. The metallic temperature dependence of electrical conductivity was observed down to 180 K, showing a maximum of 13 S/cm. The X-ray diffraction measurements show the presence of three kinds of domains corresponding to CT complex, icosanoic acid and disordered CT complex regions. The behavior of macroscopic electrical conductivity is understood well by a percolation model consisting of metallic, semiconducting and insulating sites.
Keywords
Langmuir-Blodgett technique , X-ray emission , Diffraction and scattering , Metallic films , Metal-insulator phase transitions
Journal title
Synthetic Metals
Serial Year
1997
Journal title
Synthetic Metals
Record number
2071171
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