Title of article
Carrier doping to (DCNQI)2Li
Author/Authors
Hiraki، نويسنده , , K. and Kanoda، نويسنده , , K.، نويسنده ,
Issue Information
دوماهنامه با شماره پیاپی سال 1997
Pages
2
From page
2111
To page
2112
Abstract
The alloy systems, (DMe-DCNQI)2Li1−xCux, have been investigated with the aim of controlling of the electronic state by doping of Cu ions into the (spin-) Peierls insulator, (DMe-DCNQI)2Li. Light doping (x<0.3) decreases the (spin-) Peierls transition temperature. In a heavily doped region (x>0.5), the systems are metallic down to at least 1.5K. It is found that the values of (T1T)−1 of 13C-NMR in the high temperature region (T>100K) change systematically with doping concentration, x.
Keywords
Nuclear magnetic resonance , metal-insulator transition , Organic conductor based on radical cation and/or anion salts
Journal title
Synthetic Metals
Serial Year
1997
Journal title
Synthetic Metals
Record number
2071299
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