trans-trans-2,5-Bis-[2-5-(2,2′-bithienyl)ethenyl]thiophene: synthesis, characterization, thin film deposition and fabrication of organic field-effect transistors

trans-trans-2,5-Bis-[2-5-(2,2′-bithienyl)ethenyl]thiophene (BTET) was synthesized and then purified in a gradient sublimation system. It was characterized using IR, UV—Vis and mass spectroscopy, and elemental analysis. BTET films were deposited with molecular beam deposition (MBD) or spin-coating from solution. Insulated-gate field-effect transistor (IGFET) devices based on such films were used to study their electrical transport properties. A field-effect mobility of 0.01 cm2 V−1 s−1 was measured from films deposited with MBD, while the mobility of the spin-coated films was slightly above 0.001 cm2 V−1 s−1.