Title of article
Bias-stress induced instability of organic thin film transistors
Author/Authors
Matters، نويسنده , , M. and de Leeuw، نويسنده , , D.M. and Herwig، نويسنده , , P.T. and Brown، نويسنده , , A.R.، نويسنده ,
Issue Information
دوماهنامه با شماره پیاپی سال 1999
Pages
2
From page
998
To page
999
Abstract
We have investigated the stability of polythienylene vinylene field-effect transistors under gate bias stress. On time scales up to 1000 s and temperatures up to 140 °C, we only observe reversible charge relaxation effects and no degradation. We show the time dependence of the threshold voltage shift at different temperatures. Furthermore, we discuss the influence of water and oxygen on the relaxation process.
Keywords
Conjugated Polymers , Semiconductor/insulator interfaces
Journal title
Synthetic Metals
Serial Year
1999
Journal title
Synthetic Metals
Record number
2072483
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