Title of article
Investigations into a low band gap, semiconducting polymer
Author/Authors
Mills، نويسنده , , C.A. and Taylor، نويسنده , , D.M. and Murphy، نويسنده , , P.J. and Dalton، نويسنده , , C. and Jones، نويسنده , , G.W. and Hall، نويسنده , , L.M. and Hughes، نويسنده , , A.V.، نويسنده ,
Issue Information
دوماهنامه با شماره پیاپی سال 1999
Pages
2
From page
1000
To page
1001
Abstract
A low bandgap polymer based on a carbon-bridged dithienyl monomer has been prepared by potentiostatic electrodeposition. Microscopic analysis of the polymer revealed a generally smooth morphology with scattered features protruding from the surface. Raman mapping shows the presence of a thickness dependent fluorescence in the film. Al/polymer/ITO Schottky diodes based on this new polymer show a small degree of rectification.
Keywords
Electrochemical polymerisation , Semiconducting films , Low-bandgap conjugated polymers
Journal title
Synthetic Metals
Serial Year
1999
Journal title
Synthetic Metals
Record number
2072484
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