Sub-micron spatial resolution Raman spectroscopy and its application to stress mapping in silicon

ning near-field optical microscope (SNOM) capable of recording Raman spectra with a spatial resolution of150 run has been constructed. The instrument has been used to generate a high resolution Raman map of the region surrounding a scratch in a single crystal silicon wafer. The Raman data indicates that the silicon has undergone a phase change during the scratching process. Shifts in the silicon Raman band have been used to map residual stress adjacent to the scratch.