Organic static induction transistor for display devices

Organic static induction transistors (SITs) for display devices are proposed and the basic electrical characteristics of the SITs are investigated. The organic SITs, using a copper phthalocyanine (CuPc) evaporated film as an active layer, have a layered structure of Au (drain)/CuPc/Al (gate)/CuPc/Au (source)/glass. The electrical characteristics show that the current flow from the source to drain electrodes is controlled by relatively low gate voltages. Furthermore, excellent characteristics such as a high current density of approximately 4 mA/cm2 and high-speed operation of less than 0.25 ms are realized by applying a buried Al grid electrode as the Schottky gate.