Title of article
Electron injection into an Alq3 single-layer organic light-emitting diode
Author/Authors
Barth، نويسنده , , S and Müller، نويسنده , , P and Riel، نويسنده , , H and Seidler، نويسنده , , P.F and Rieك، نويسنده , , W and Vestweber، نويسنده , , H and Wolf، نويسنده , , U and Bنssler، نويسنده , , H، نويسنده ,
Issue Information
دوماهنامه با شماره پیاپی سال 2000
Pages
4
From page
327
To page
330
Abstract
Electric field and temperature-dependent electron injection studies have been performed in an aluminum (Al)/tris(8-hydroxy-quinolinolato)aluminum (Alq3)/magnesium (Mg):silver (Ag) single-layer organic light-emitting diode (OLED). Semiconductor textbook theories, such as Fowler–Nordheim (FN) model for tunneling injection or Richardson–Schottky (RS) model for thermionic emission cannot account for the experimentally observed dependence of the injection current on electric field and temperature. Excellent agreement with experiment is provided by a Monte Carlo simulation of carrier injection from a metal into an organic dielectric with random hopping sites.
Keywords
Alq3 , Light-emitting diode , electron injection
Journal title
Synthetic Metals
Serial Year
2000
Journal title
Synthetic Metals
Record number
2073652
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