Title of article
Tetra-phenyl porphyrin based thin film transistors
Author/Authors
Checcoli، نويسنده , , P. and Conte، نويسنده , , G. and Salvatori، نويسنده , , S. and Paolesse، نويسنده , , R. and Bolognesi، نويسنده , , A. and Berliocchi، نويسنده , , M. and Brunetti، نويسنده , , F. and Amico، نويسنده , , A. and Di Carlo، نويسنده , , A. and Lugli، نويسنده , , P.، نويسنده ,
Issue Information
دوماهنامه با شماره پیاپی سال 2003
Pages
6
From page
261
To page
266
Abstract
Long channel p-type field effect transistors were realized by using 5,10,15,20-tetra-phenyl porphyrin. The organic was deposited by spray coating from a chloroform solution onto thermally oxidized silicon substrates where chromium source and drain contact
Keywords
Leakage currents , molecular electronics , Porphyrins , Organic thin film transistor
Journal title
Synthetic Metals
Serial Year
2003
Journal title
Synthetic Metals
Record number
2078863
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