Title of article
In situ electrical characterization of DH4T field-effect transistors
Author/Authors
Muck، نويسنده , , T. and Wagner، نويسنده , , V. and Bass، نويسنده , , U. and Leufgen، نويسنده , , M. and Geurts، نويسنده , , J. and Molenkamp، نويسنده , , L.W.، نويسنده ,
Issue Information
دوماهنامه با شماره پیاپی سال 2004
Pages
4
From page
317
To page
320
Abstract
We present an in situ electrical analysis of organic thin film transistors (OTFTs) during the deposition of the active layer of dihexylquaterthiophene (DH4T). At elevated temperatures (90 °C) DH4T films exhibit a smectic mesophase with extremely large 2D
Keywords
Organic thin film transistors , Monolayers , Dihexylquaterthiophene
Journal title
Synthetic Metals
Serial Year
2004
Journal title
Synthetic Metals
Record number
2080910
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