Title of article
Electrical characterization of pentacene thin-film transistors with polymeric gate dielectric
Author/Authors
Puigdollers، نويسنده , , J. and Voz، نويسنده , , C. and Martيn، نويسنده , , I. and Vetter، نويسنده , , M. and Orpella، نويسنده , , A. and Alcubilla، نويسنده , , R.، نويسنده ,
Issue Information
دوماهنامه با شماره پیاپی سال 2004
Pages
4
From page
355
To page
358
Abstract
Pentacene thin films obtained by thermal evaporation at room temperature have been incorporated as the active layer in bottom-gate thin-film transistors (TFTs). The dielectric was spin-cast polymethyl methacrylate (PMMA) baked at only 170 °C. Crystalline
Keywords
Thin-film transistors (TFTs) , pentacene , PMMA dielectric
Journal title
Synthetic Metals
Serial Year
2004
Journal title
Synthetic Metals
Record number
2080949
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