Title of article
Organic field-effect transistors with ultrathin modified gate insulator
Author/Authors
Majewski، نويسنده , , L.A. and Grell، نويسنده , , M.، نويسنده ,
Issue Information
دوماهنامه با شماره پیاپی سال 2005
Pages
5
From page
175
To page
179
Abstract
In this communication, we demonstrate high capacitance, low-voltage organic field-effect transistors (OFETs) built on extremely cheap, flexible, commercially available aluminized Mylar® films covered by ultrathin (∼3.5 nm) SiO2 layers, which were modified
Keywords
Gate insulator , Self-assembled monolayer (SAM) , Low voltage , Organic field-effect transistor (OFET)
Journal title
Synthetic Metals
Serial Year
2005
Journal title
Synthetic Metals
Record number
2081326
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