Title of article
Air stable and low temperature evaporable Li3N as a n type dopant in organic light-emitting diodes
Author/Authors
Yook، نويسنده , , Kyoung Soo and Jeon، نويسنده , , Soon Ok and Joo، نويسنده , , Chul Woong and Lee، نويسنده , , Jun-Yeob and Lee، نويسنده , , Tae-Woo and Noh، نويسنده , , Taeyong and Yang، نويسنده , , Haa-Jin and Kang، نويسنده , , Sung-Kee، نويسنده ,
Issue Information
دوماهنامه با شماره پیاپی سال 2009
Pages
3
From page
1664
To page
1666
Abstract
N doped organic light-emitting diodes were developed by using Li3N as a n type dopant in electron transport layer. Driving voltage was greatly lowered by using Li3N doped electron transport layer and combination of MoO3 doped hole transport layer with Li3N doped electron transport layer gave high quantum efficiency of 15% and low driving voltage of 4 V at 1000 cd/m2 in green phosphorescent organic light-emitting diodes. Decomposition of Li3N during evaporation into Li and N2 was found to be responsible for n doping effect of Li3N.
Keywords
high efficiency , Low driving voltage , N doping , LiN3
Journal title
Synthetic Metals
Serial Year
2009
Journal title
Synthetic Metals
Record number
2085584
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