Title of article
Improved device performance based on crosslinking of poly (3-hexylthiophene)
Author/Authors
Gaur، نويسنده , , Manoj and Lohani، نويسنده , , Jaya and Raman، نويسنده , , R. and Balakrishnan، نويسنده , , V.R. and Raghunathan، نويسنده , , P. and Eswaran، نويسنده , , S.V.، نويسنده ,
Issue Information
دوماهنامه با شماره پیاپی سال 2010
Pages
4
From page
2061
To page
2064
Abstract
Diode devices (glass/ITO/polymer/Al) have been fabricated using poly (3-hexylthiophene) (P3HT) crosslinked with two different biaryl crosslinkers. Crosslinking was performed by exposing the thin films with different wt% of crosslinker to UV irradiation and progress of crosslinking was monitored by IR spectroscopy. An increase in hole mobility of two orders of magnitude has been observed after crosslinking.
Keywords
Crosslinkers , Diode devices , Bisazides , Poly (3-hexylthiophene)
Journal title
Synthetic Metals
Serial Year
2010
Journal title
Synthetic Metals
Record number
2087637
Link To Document