Extraction of electronic parameters of organic diode fabricated with NIR absorbing functional manganase phthalocyanine organic semiconductor

The semiconducting and metal/organic semiconductor properties of the newly synthesized NIR absorbing α-substituted manganase phthalocyanine bearing functional 2,3-dihydroxypropylthio moieties {M[Pc(S–CH3CH2(OH)CH2(OH))]4X}(M = MnIII) have been investigated by electrical conductivity–temperature, optical absorption and current–voltage characteristics methods. The electrical conductivity increases with the temperature, suggesting that the peripheral α-substituted-functional manganase phthalocyanine is an organic semiconductor. The optical band gap and trap energy values were determined and were found to be 2.98 eV and 1.95 eV, respectively. The ITO/MnPc/Al diode shows a rectifying behavior due to the formation of MnPc/Al interface with a rectification ratio of 29.4 at ±2 V. The series resistance Rs and ideality factor n values were found to be 102.6 kΩ and 8.89, respectively. The interface state density for the diode was of order of 2.73 × 1011 eV−1 cm−2 with the interface time constant of 1.93 × 10−5. evaluated that newly synthesized α-substituted manganase phthalocyanine bearing functional 2,3-dihydroxypropylthio moieties is an organic semiconductor and can be used in electronic device applications as an organic diode.