Field effect in chemical vapour deposited graphene incorporating a polymeric gate dielectric

We have investigated the room temperature long channel field effect characteristics of a single graphene layer transistor incorporating a poly-4-vinyl-phenol (PVP) organic insulating layer, as an alternative to conventional oxide gate dielectric materials. High purity copper foils were used in the chemical vapour growth of the graphene layer and visible Raman analysis confirmed the presence of a high quality mono-layer carbon film. Using a channel length of 50 μm, a field effect hole mobility of 37 cm2/Vs was calculated, which demonstrates the possibility of an all carbon graphene based large area transistor with carrier mobilities above those found in conventional long channel all organic electronic transistors.