• Title of article

    Photocurrent stability and responsivity in the n-type Si/ZnO-doped conducting polymer photovoltaic device

  • Author/Authors

    Lin، نويسنده , , Yow-Jon and Su، نويسنده , , Ting-Hong and Lin، نويسنده , , Jung-Chung and Su، نويسنده , , Yu-Chao، نويسنده ,

  • Issue Information
    دوماهنامه با شماره پیاپی سال 2012
  • Pages
    4
  • From page
    406
  • To page
    409
  • Abstract
    In this study, the effect of the incorporation of ZnO nanoparticles into poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) (PEDOT:PSS) on the photovoltaic property and photoresponse in the n-type Si/PEDOT:PSS device was examined. The enhanced responsivity by ZnO doping can be interpreted by the external light injection and the device rectifying performance. The improved photocurrent stability by incorporation of ZnO nanoparticles into PEDOT:PSS can be explained by the reduced charge-trap density in the ZnO-doped PEDOT:PSS film.
  • Keywords
    Polymer , Photoresponse , ZNO , Conductivity , DEFECT , SI
  • Journal title
    Synthetic Metals
  • Serial Year
    2012
  • Journal title
    Synthetic Metals
  • Record number

    2088823