Extracting parameters from current–voltage characteristics of pentacene field-effect transistor in saturation region

The pentacene thin film transistor was fabricated on a SiO2 layer by thermal evaporation method. Using the variable range hopping model (VRH), we have calculated the mobility of carrier charges in saturation region. The electrical parameters, conductance gch and the total resistance RT, of the pentacene transistor were extracted using a differential method based on first and second numerical derivatives of electrical measurement. The obtained results are in good agreement with the experimental results.