• Title of article

    An amorphous oxide semiconductor thin-film transistor route to oxide electronics

  • Author/Authors

    Wager، نويسنده , , John F. and Yeh، نويسنده , , Bao and Hoffman، نويسنده , , Randy L. and Keszler، نويسنده , , Douglas A.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2014
  • Pages
    9
  • From page
    53
  • To page
    61
  • Abstract
    Amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) invented only one decade ago are now being commercialized for active-matrix liquid crystal display (AMLCD) backplane applications. They also appear to be well positioned for other flat-panel display applications such as active-matrix organic light-emitting diode (AMOLED) applications, electrophoretic displays, and transparent displays. The objectives of this contribution are to overview AOS materials design; assess indium gallium zinc oxide (IGZO) TFTs for AMLCD and AMOLED applications; identify several technical topics meriting future scrutiny before they can be confidently relied upon as providing a solid scientific foundation for underpinning AOS TFT technology; and briefly speculate on the future of AOS TFTs for display and non-display applications.
  • Keywords
    Amorphous oxide semiconductor (AOS) , Oxide electronics , Active-matrix liquid crystal display (AMLCD) , Indium gallium zinc oxide (IGZO) , flat-panel displays , Active-matrix organic light-emitting diode (AMOLED) , Thin-film transistor (TFT)
  • Journal title
    Current Opinion in Solid State and Materials Science
  • Serial Year
    2014
  • Journal title
    Current Opinion in Solid State and Materials Science
  • Record number

    2089385