Title of article
Temperature effect on spin relaxation in organic semiconductors
Author/Authors
Yin، نويسنده , , Sun and Xie، نويسنده , , S.J. and Gao، نويسنده , , K. and Wang، نويسنده , , X.R.، نويسنده ,
Issue Information
دوماهنامه با شماره پیاپی سال 2013
Pages
5
From page
35
To page
39
Abstract
Spin relaxation due to energy level fluctuation in organic semiconductors is investigated by solving the Schrِdinger equation of a two-level system with diagonal Hamiltonian elements being described by stochastic processes. When the polaron pair situates on one molecule, or an exciton, no spin relaxation is possible. In the opposite case when the coupled polaron pair distributes in two neighbor molecules, the relaxation occurs between spin singlet and one of the spin triplet states but not between spin triplet states. Based on our results we discuss the temperature effect in the exciton and bipolaron mechanisms proposed for organic magnetoresistance.
Keywords
Organicmagnetoresistance , Organic magnetic electroluminescence , Temperature , Spin relaxation , Stochastic processes
Journal title
Synthetic Metals
Serial Year
2013
Journal title
Synthetic Metals
Record number
2089697
Link To Document