Title of article
High spin polarization at the Fe/C60 interface in the Fe-doped C60 film
Author/Authors
Sakai، نويسنده , , Seiji and Matsumoto، نويسنده , , Yoshihiro and Ohtomo، نويسنده , , Manabu and Entani، نويسنده , , Shiro and Avramov، نويسنده , , Pavel V. and Sorokin، نويسنده , , Pavel B. and Naramoto، نويسنده , , Hiroshi، نويسنده ,
Issue Information
دوماهنامه با شماره پیاپی سال 2013
Pages
4
From page
22
To page
25
Abstract
A process of tunneling conduction and the spin-dependent resistivity change (so-called tunneling magnetoresistance effect) in the Fe-doped C60 film with a granular structure is investigated for the current-into-plane device. Cooperative tunneling (cotunneling) through several Fe nanoparticles is suggested to be operative at temperatures lower than 20 K. By considering the effect of cotunneling on the magnetoresistance ratio, it is successfully shown that the spin polarization of tunneling electrons generated at the Fe/C60 interface is much higher than that in Fe crystal at low temperature in a similar fashion to that at the Co/C60 interface in the Co-doped C60 films. A strong temperature dependence of spin polarization is observed, suggesting a possible influence by the thermally induced disorders ascribed to the Fe atoms bonded with C60 in the C60Fe compound.
Keywords
spin polarization , Spinterfaces , Fullerene , Magnetic metal , TMR effect
Journal title
Synthetic Metals
Serial Year
2013
Journal title
Synthetic Metals
Record number
2089944
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