Ellipsometric studies of polycrystalline molybdenum silicide thin films

Systematic ellipsometric studies of MoSi2 (tetragonal) thin films formed by RTA processing of cosputtered Mo25Si75, Mo30Si70, and Mo36Si64 thin films are discussed. The optical properties of these films in the measured spectral range 1.3–5.3 eV were observed to be dominated by the microstructural variations such as due to the changes in density, oxide overlayer thickness and composition, surface roughness, and redistribution of available excess silicon (after formation of MoSi2 (tetragonal) phase). These microstructural variations indicated modification of interfaces and significant change in conductivity, which were corroborated in the AES depth profiles and the electrical resistivity measurements.