Title of article
Electrical and Magnetic Characterization of Rh2O3-I
Author/Authors
Roy، نويسنده , , A and Ghose، نويسنده , , J، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1998
Pages
5
From page
547
To page
551
Abstract
Electrical and magnetic measurement results show that Rh2O3-I is a p-type semiconductor showing temperature independent Pauli paramagnetism above 200 K. Below 200 K, this oxide shows an increase in the magnetic susceptibility with decreasing temperature, indicating a magnetic phase transition at 200 K. This transition is also reflected in the electrical resistivity measurements.
Keywords
A. Oxides , C. Infrared spectroscopy , D. Electrical properties , D. Magnetic properties , A. Semiconductors
Journal title
Materials Research Bulletin
Serial Year
1998
Journal title
Materials Research Bulletin
Record number
2093927
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