Title of article
The Crystallization Path of SrBi2Ta2O9 from Sr–Bi–Ta–O MOD Precursors
Author/Authors
Tanaka، نويسنده , , M and Watanabe، نويسنده , , K and Katori، نويسنده , , Mareo Yamoto، نويسنده , , H and Yagi، نويسنده , , H، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1998
Pages
6
From page
789
To page
794
Abstract
The path of crystal growth from the precursor to SrBi2Ta2O9 (SBT) crystal was investigated in order to obtain a better method of fabricating SBT films. A phase diagram of the Sr–Bi–Ta–O system with a constituent element ratio similar to that of SBT was determined. Thin film samples were prepared by the metal–organic decomposition method. In the case of a Bi-rich nominal composition (compared with SBT crystal), a fluorite-like structure appeared at the early stage of the crystal growth, after which the SBT phase was finally stabilized. The lower limit of annealing temperature for synthesis of SBT thin films with thicknesses less than 100 nm was about 650°C.
Keywords
D. Ferroelectricity , A. Oxides , A. Thin films , B. Crystal growth , D. Crystal structure
Journal title
Materials Research Bulletin
Serial Year
1998
Journal title
Materials Research Bulletin
Record number
2093976
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