Characterization of (Ba0.65Sr0.35)(Ti0.65Zr0.35)O3 thin film

The crystal structure and dielectric properties of (Ba0.65Sr0.35)(Ti0.65Zr0.35)O3 (BSTZ) films were investigated. The films were deposited on Pt/Ti/SiO2/Si(100) substrates by metal–organic decomposition (MOD) method and rf magnetron sputtering. The crystal structure of the BSTZ film was cubic perovskite, and the preferred orientation of the film varied with annealing temperature. The MOD film annealed at 750°C exhibited excellent dielectric properties of dielectric constant, k ≈ 1,000 and dissipation factor, tan δ ≤ 0.04. The films also showed a very stable leakage current behavior vs. applied field. The leakage current density, J, increased smoothly with field, up to E = 0.3 MV/cm, and was 3.47 × 10−7 A/cm2 at 1.25 V.