Title of article
Defect formation in diamond single crystals grown from the Fe-Ni-C system at high temperature and high pressure
Author/Authors
Yin، نويسنده , , Long-Wei and Li، نويسنده , , Mu-Sen and Li، نويسنده , , Feng-Zhao and Sun، نويسنده , , Dong-Sheng and Hao، نويسنده , , Zhao-Yin، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
6
From page
2283
To page
2288
Abstract
Some defects were formed in diamond single crystals grown from an Fe-Ni-C system at high temperature high pressure (HPHT). These defects were successfully examined by transmission electron microscopy (TEM) and a kind of indirect lattice image called moiré fringe. These defects are mainly composed of vacancy-type prismatic dislocation loops, stacking-fault tetrahedra, an array of parallel dislocation lines, and dislocation networks. The formation process of these defects was analyzed briefly. It was suggested that these defects in the diamond crystal were derived from vacancies and inclusions, which were contained in the diamond single crystal during the diamond synthesis at high temperature and high pressure.
Keywords
D. Defects , C. Electron microscopy , C. High pressure , B. Crystal growth
Journal title
Materials Research Bulletin
Serial Year
2001
Journal title
Materials Research Bulletin
Record number
2095508
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