• Title of article

    Defect formation in diamond single crystals grown from the Fe-Ni-C system at high temperature and high pressure

  • Author/Authors

    Yin، نويسنده , , Long-Wei and Li، نويسنده , , Mu-Sen and Li، نويسنده , , Feng-Zhao and Sun، نويسنده , , Dong-Sheng and Hao، نويسنده , , Zhao-Yin، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2001
  • Pages
    6
  • From page
    2283
  • To page
    2288
  • Abstract
    Some defects were formed in diamond single crystals grown from an Fe-Ni-C system at high temperature high pressure (HPHT). These defects were successfully examined by transmission electron microscopy (TEM) and a kind of indirect lattice image called moiré fringe. These defects are mainly composed of vacancy-type prismatic dislocation loops, stacking-fault tetrahedra, an array of parallel dislocation lines, and dislocation networks. The formation process of these defects was analyzed briefly. It was suggested that these defects in the diamond crystal were derived from vacancies and inclusions, which were contained in the diamond single crystal during the diamond synthesis at high temperature and high pressure.
  • Keywords
    D. Defects , C. Electron microscopy , C. High pressure , B. Crystal growth
  • Journal title
    Materials Research Bulletin
  • Serial Year
    2001
  • Journal title
    Materials Research Bulletin
  • Record number

    2095508