Title of article
On the crystallization kinetics of solution deposited PZT thin films
Author/Authors
Es-Souni، نويسنده , , M and Piorra، نويسنده , , A، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
13
From page
2563
To page
2575
Abstract
The crystallization kinetics of strongly textured (100)-PZT thin films on highly textured (111)-Pt have been investigated in the temperature range from 550 to 700°C. It is shown that the crystallization proceeds by the formation of globular, Zr-depleted, and Pb-rich particles that show necklace patterns. The crystallization kinetics can be described by an Avrami type analysis with a rate exponent of 1.3 and an activation energy of 141 kJ/mol. The relative dielectric constant depends strongly on the firing temperature and time, and ranges from 650 to 4000.
Keywords
A. Thin films , D. Microstructure , C. X-ray diffraction , D. Dielectric properties , B. Chemical solution deposition , C. Electron microscopy
Journal title
Materials Research Bulletin
Serial Year
2001
Journal title
Materials Research Bulletin
Record number
2095566
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