Al–Sn thin films deposited by pulsed laser ablation

Al–Sn thin films were deposited at room temperature on Si substrate by pulsed laser ablation (PLA) of Al–Sn alloy targets in a high-vacuum (10−5 Pa) chamber. To our knowledge, it is the first time that Al–Sn alloy is deposited as thin films by pulsed laser deposition. Different diagnostic techniques were used to deduce the morphology and the composition of the films obtained. The films were planar and well adhered to their substrates, even though a strong Al depletion effect was observed indicating a noncongruent laser ablation regime. The origin of the aluminum deficit in the deposited films seems to be due to the thermal ablation process of the targets.