Insulating properties of rapid thermally processed Bi2Ti2O7 thin films by a chemical solution decomposition technique

Crack-free Bi2Ti2O7 thin films on silicon substrates were prepared using chemical solution decomposition technique, and then treated by rapid thermal annealing. The microstructure of the films was studied by scanning electron microscopy. The effects of different fabricating procedures and various annealing temperatures and times on the leakage current density were investigated. The results show that the leakage current density decreases with increasing annealing temperature, while increases with increasing annealing time. Annealing temperature has a much stronger effect on the insulating properties of Bi2Ti2O7 thin films than that of annealing time.