Role of the gas pressure and hydrogen dilution on the properties of large area nanocrystalline p-type silicon films produced by hot wire technique

This paper reports results on the role of high hydrogen dilution (above 80%) on the electro-optical and structural properties of boron doped silicon films produced by hot wire chemical vapor deposition (HW-CVD) technique, keeping constant the filament temperature. The structural, compositional, morphological, electrical and optical properties achieved show that the films present excellent homogeneity over the entire 10×10 cm deposited area. These results were obtained for films produced at gas pressures below 66.5 Pa, in spite of the high flow rate used.