Title of article
Morphology and strongly enhanced photoluminescence of porous GaAs layers made by anodic etching
Author/Authors
Sabataityt?، نويسنده , , J and ?imkien?، نويسنده , , I and Bendorius، نويسنده , , R.-A and Grigoras، نويسنده , , K and Jasutis، نويسنده , , V and Pa?ebutas، نويسنده , , V and Tvardauskas، نويسنده , , H and Naud?ius، نويسنده , , K، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2002
Pages
5
From page
155
To page
159
Abstract
Porous GaAs layers obtained by electrochemical etching were investigated using SEM, TEM and optical methods. The morphology, chemical composition and photoluminescence of porous layers were investigated. It was shown that porous layer consists of Ga2O3, As2O3, As2O5 and GaAs submicron grains. Photoluminescence spectra of investigated porous layers consist of “infrared” and “green” spectral structures. The observed short wavelength photoluminescence (PL) at 590–778 nm of the porous layer is explained by the quantum size effect in the GaAs nanocrystals.
Keywords
Photoluminescence , XPS , Porous GaAs , AFM
Journal title
Materials Science and Engineering C
Serial Year
2002
Journal title
Materials Science and Engineering C
Record number
2097720
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