Title of article
Self-organized semiconductor nanostructures: shape, strain and composition
Author/Authors
Stangl، نويسنده , , J. and Hol، نويسنده , , V. and Springholz، نويسنده , , G. and Bauer، نويسنده , , G. and Kegel، نويسنده , , Dorothea I. and Metzger، نويسنده , , T.H.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2002
Pages
10
From page
349
To page
358
Abstract
An overview on various X-ray scattering and diffraction techniques is presented, from which information on the shape and size of quantum dots and wires, their composition and strain state can be obtained. These methods are described and applied to studies of InAs, PbSe and Ge-based nanostructures.
Keywords
Quantum dots and islands , Grazing incidence diffraction , X-ray diffraction , GISAXS
Journal title
Materials Science and Engineering C
Serial Year
2002
Journal title
Materials Science and Engineering C
Record number
2097789
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