Title of article
Excitons localization effects in GaAsN/GaAs epilayers grown by MOCVD
Author/Authors
Saidi، نويسنده , , F and Hassen، نويسنده , , F and Maaref، نويسنده , , H and Auvray، نويسنده , , L and Dumont، نويسنده , , H and Monteil، نويسنده , , Y، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2002
Pages
5
From page
245
To page
249
Abstract
Optical studies of GaAs1−xNx/GaAs epilayers grown by metal-organic chemical vapour deposition (MOCVD), with low nitrogen concentration (1.65% and 2.2%), have been achieved by a number of optical techniques such as photoluminescence (PL), photoreflectance (PR) spectroscopies and time-resolved PL (TR-PL) measurements in the nanosecond range. It has been shown that the increase of the nitrogen fraction causes a red shift of the PL emission band compared to the GaAs one. TR-PL results at 12 K reveal that the decay time is clearly dependent on the emission energy. It increases for lower emission energy. From the temperature PL decay lifetime study, we suggest that PL emission is dominated by the recombination of localized excitons trapped by potential fluctuations of the near band edge induced by compositional fluctuations in GaAsN epilayer.
Keywords
Epilayers , MOCVD , excitons
Journal title
Materials Science and Engineering C
Serial Year
2002
Journal title
Materials Science and Engineering C
Record number
2097899
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