Title of article
Porous layers on compensated GaAs:Cr
Author/Authors
S?imkien?، نويسنده , , A. and Sabataityt?، نويسنده , , J. and Karpus، نويسنده , , V. and R?za، نويسنده , , A. and Babonas، نويسنده , , G.-J. and C?echavic?ius، نويسنده , , B. and Suchodolskis، نويسنده , , A.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
5
From page
977
To page
981
Abstract
Porous multi-layered structures on GaAs:Cr (001) were formed by anodic etching in HF acid based electrolyte. The top layer with a thickness of 0.5–1.5 μm consists mainly of As- and Ga-oxides. As–O crystallites oriented along [110]-axes were observed. Below the top layer, a porous layer of 2–10 μm thickness is formed with micro-pores of up to 2 μm in diameter. The structure and chemical composition of porous GaAs:Cr was studied by SEM, AFM and photoemission microspectroscopy. The porous GaAs:Cr samples were characterized by spectroscopic ellipsometry and modulation spectroscopy techniques. The optical response of the complex sample was analysed in terms of the pseudodielectric function.
Keywords
Porous GaAs:Cr
Journal title
Materials Science and Engineering C
Serial Year
2003
Journal title
Materials Science and Engineering C
Record number
2098198
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