Title of article
Theoretical and experimental investigations of single- and multilayer structures with SiGe nanoislands
Author/Authors
Yukhymchuk، نويسنده , , V.O and Yaremko، نويسنده , , A.M and Valakh، نويسنده , , M.Ya and Novikov، نويسنده , , A.V and Mozdor، نويسنده , , E.V and Lytvyn، نويسنده , , P.M and Krasilnik، نويسنده , , Z.F and Kladʹko، نويسنده , , V.P and Dzhagan، نويسنده , , V.M and Mestres، نويسنده , , N and Pascual، نويسنده , , J، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
5
From page
1027
To page
1031
Abstract
The influence of geometrical and physical parameters of self-assembled SiGe/Si nanoislands on their energy has been investigated theoretically. The island energy minimum was shown to depend on the growth temperature and Si content in the islands. The results of the theoretical calculations are compared with experimental data obtained by atomic force microscopy and Raman spectroscopy (RS).
Keywords
GeSi nanoislads , Elastic strain , Raman , AFM , X-Ray
Journal title
Materials Science and Engineering C
Serial Year
2003
Journal title
Materials Science and Engineering C
Record number
2098224
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